在蓝宝石硅衬底上生长的SiGe p- modfet的辐射效应

2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-01 DOI:10.1109/RADECS.2009.5994547

A. Madan, Jiong Jiong Mo, R. Arora, S. Phillips, J. Cressler, P. Marshall, peixiong zhao, S. Koester

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引用次数: 0

摘要

本文首次研究了应变SiGe p- modfet对63mev质子的辐射响应。可以观察到，在质子暴露后，器件的漏极电流和跨导都略有改善(增加)。在辐照前后都进行了低频噪声测量，以更好地了解陷阱的作用，并改善暴露后的情况。器件高锗含量的SiGe层的局部应变可能影响辐照后的阱密度。

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Radiation effects in SiGe p-MODFETs grown on Silicon-on-Sapphire substrates

The radiation response of strained SiGe p-MODFETs to 63 MeV protons is investigated for the first time. It is observed that both the drain current and the transconductance of the devices improve (increase) marginally following proton exposure. Low-frequency noise measurements were made both before and after irradiation to better understand the role of traps, and also improves following exposure. Localized strain in high Ge content SiGe layers of the device may affect the trap density after irradiation.

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2009 European Conference on Radiation and Its Effects on Components and Systems

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