利用硅CMOS技术实现量子信息

L. Hutin, B. Bertrand, R. Maurand, M. Urdampilleta, B. Jadot, H. Bohuslavskyi, L. Bourdet, Y. Niquet, X. Jehl, S. Barraud, C. Bäuerle, T. Meunier, M. Sanquer, S. de Franceschi, M. Vinet
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引用次数: 0

摘要

我们介绍了基于硅CMOS技术平台的量子信息处理基本构建块的实现的一些最新进展。在我们的方法中,其特点是强调工艺和材料方面的铸造厂兼容性,所谓的量子位是在门受限基本电荷的自旋自由度中编码的。在介绍了各种量子比特操作、耦合和读出方案之后,我们讨论了可扩展性的一些前景,特别是FDSOI技术的一些潜在优势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Harnessing Si CMOS technology for quantum information
We present some recent progress towards the implementation of the basic building blocks of quantum information processing derived from a Si CMOS technology platform. In our approach, characterized by an emphasis on foundry compatibility in terms of processes and materials, the so-called qubits are encoded in the spin degree of freedom of gate-confined elementary charges. After introducing various qubit manipulation, coupling and readout schemes, we discuss some prospects for scalability, and in particular some potential advantages of the FDSOI technology.
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