T. Naito, M. Takei, M. Nemoto, T. Hayashi, K. Ueno
{"title":"用于矩阵变换器的低损耗1200V反向阻断IGBT","authors":"T. Naito, M. Takei, M. Nemoto, T. Hayashi, K. Ueno","doi":"10.1109/WCT.2004.239842","DOIUrl":null,"url":null,"abstract":"This paper presents, for the first time, the design concepts of an isolation type 1200 V reverse blocking IGBT (RB-IGBT) for matrix converters. The device features thin wafer technology and a deep boron diffusion technique. From experimental results, it has been found that the 1200 V RB-IGBT attains about 20% reduction in total generated loss when compared to the combination of the IGBT and the diode, while keeping improved blocking capability with both polarities. A high efficiency matrix converter can be achieved by using the RB-IGBTs and this has a great possibility to replace the conventional DC-linked-type circuits.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"213 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"49","resultStr":"{\"title\":\"1200V reverse blocking IGBT with low loss for matrix converter\",\"authors\":\"T. Naito, M. Takei, M. Nemoto, T. Hayashi, K. Ueno\",\"doi\":\"10.1109/WCT.2004.239842\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents, for the first time, the design concepts of an isolation type 1200 V reverse blocking IGBT (RB-IGBT) for matrix converters. The device features thin wafer technology and a deep boron diffusion technique. From experimental results, it has been found that the 1200 V RB-IGBT attains about 20% reduction in total generated loss when compared to the combination of the IGBT and the diode, while keeping improved blocking capability with both polarities. A high efficiency matrix converter can be achieved by using the RB-IGBTs and this has a great possibility to replace the conventional DC-linked-type circuits.\",\"PeriodicalId\":303825,\"journal\":{\"name\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"213 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-05-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"49\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WCT.2004.239842\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCT.2004.239842","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 49
摘要
本文首次提出了用于矩阵变换器的隔离型1200v反向阻断IGBT (RB-IGBT)的设计概念。该装置采用薄晶片技术和深硼扩散技术。实验结果表明,与IGBT和二极管的组合相比,1200 V RB-IGBT的总产生损耗降低了约20%,同时在两个极性下都保持了更好的阻塞能力。利用rb - igbt可以实现高效率的矩阵变换器,这有很大的可能性取代传统的直流连接型电路。
1200V reverse blocking IGBT with low loss for matrix converter
This paper presents, for the first time, the design concepts of an isolation type 1200 V reverse blocking IGBT (RB-IGBT) for matrix converters. The device features thin wafer technology and a deep boron diffusion technique. From experimental results, it has been found that the 1200 V RB-IGBT attains about 20% reduction in total generated loss when compared to the combination of the IGBT and the diode, while keeping improved blocking capability with both polarities. A high efficiency matrix converter can be achieved by using the RB-IGBTs and this has a great possibility to replace the conventional DC-linked-type circuits.