用于矩阵变换器的低损耗1200V反向阻断IGBT

T. Naito, M. Takei, M. Nemoto, T. Hayashi, K. Ueno
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引用次数: 49

摘要

本文首次提出了用于矩阵变换器的隔离型1200v反向阻断IGBT (RB-IGBT)的设计概念。该装置采用薄晶片技术和深硼扩散技术。实验结果表明,与IGBT和二极管的组合相比,1200 V RB-IGBT的总产生损耗降低了约20%,同时在两个极性下都保持了更好的阻塞能力。利用rb - igbt可以实现高效率的矩阵变换器,这有很大的可能性取代传统的直流连接型电路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
1200V reverse blocking IGBT with low loss for matrix converter
This paper presents, for the first time, the design concepts of an isolation type 1200 V reverse blocking IGBT (RB-IGBT) for matrix converters. The device features thin wafer technology and a deep boron diffusion technique. From experimental results, it has been found that the 1200 V RB-IGBT attains about 20% reduction in total generated loss when compared to the combination of the IGBT and the diode, while keeping improved blocking capability with both polarities. A high efficiency matrix converter can be achieved by using the RB-IGBTs and this has a great possibility to replace the conventional DC-linked-type circuits.
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