新的3300V芯片一代，具有沟槽IGBT和优化的场停止概念，具有平滑的开关行为

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.239836

A. Pfaffenlehner, J. Biermann, C. Schaeffer, H. Schulze

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引用次数: 25

摘要

IGBT3技术，其沟槽电池和现场停止被引入高压应用。如果将具有高额定电流的模块用于具有高杂散电感的应用中，则必须优化场阻概念，以确保电压超调的可控性。所实现的器件在典型应用中大大降低了损耗，并允许增加转换器的功率输出。

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New 3300V chip generation with a trench IGBT and an optimized field stop concept with a smooth switching behavior

IGBT3 technology, with its trench cell and field stop is introduced for high voltage applications. The field stop concept has to be optimized, if modules with a high rated current are used in applications with a high stray inductance, to ensure the controllability of the voltage overshoot. The realized devices have greatly reduced losses in typical applications and allow an increase of the power output of converters.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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