基于清洁生产技术的mos门控功率半导体制造的集成方法，通过设计实现废物最小化

Proceedings of the 1995 IEEE International Symposium on Electronics and the Environment ISEE (Cat. No.95CH35718) Pub Date : 1900-01-01 DOI:10.1109/ISEE.1995.514984

S. Anderson, F. Balkau, C. Gurkok

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引用次数: 0

摘要

mos门控功率半导体是“高效终端”功率转换系统的使能技术。如果主要能源是以化石燃料为基础的，使用这些技术节约能源可以减少二氧化碳的排放，这对环境有益。通过设计讨论了使用清洁生产工艺制造这些技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An integrated approach to MOS-gated power semiconductor manufacturing based on cleaner production technologies for waste minimization by design

MOS-gated power semiconductors are enabling technologies for "efficient end-use" power conversion systems. The use of these technologies for energy savings offers an environmental benefit of reduction in carbon dioxide emissions if the primary energy source is fossil fuel based. The manufacturing of these technologies using clean production processes by design is discussed.

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Proceedings of the 1995 IEEE International Symposium on Electronics and the Environment ISEE (Cat. No.95CH35718)

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