CMOS技术达到规模极限后

Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08) Pub Date : 2008-05-15 DOI:10.1109/IWJT.2008.4540004

H. Iwai

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引用次数: 20

摘要

CMOS LSI的进步是由mosfet的小型化实现的。但是，预计到2020年左右，栅极长度将达到5纳米左右的极限。2020年并不遥远，但在CMOS达到其缩放极限之后，世界上还没有足够清晰的图像。本文将讨论2020年以后CMOS技术在世界上的发展情况。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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CMOS technology after reaching the scale limit

Progress of CMOS LSI has been accomplished by the downsizing of MOSFETs. However, it has been expected that the downscaling will reach its limits about the gate length of 5 nm around the year of 2020. 2020 is not too far, but there is no sufficiently clear image for the world after CMOS reaches its scaling limit. This paper will discuss the picture of the CMOS technology in the world after the 2020.

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Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08)

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