晶体管水平的因果细胞内诊断

Zhenzhou Sun, A. Bosio, L. Dilillo, P. Girard, A. Todri, A. Virazel, E. Auvray
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引用次数: 12

摘要

逻辑诊断是在有缺陷的电路中隔离观察到的错误的可能来源的过程,以便进行物理故障分析以确定此类错误的根本原因。因此,有效准确的逻辑诊断对于加快物理失效分析过程,最终提高成品率至关重要。为了提高缺陷定位的准确性,本文提出了一种基于“因果法”的细胞内诊断方法。提出的方法是基于关键路径跟踪,这里应用在晶体管级。它可以精确定位观察到的错误的根本原因。实验结果表明了该方法的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect-cause intra-cell diagnosis at transistor level
Logic diagnosis is the process of isolating possible sources of observed errors in a defective circuit, so that physical failure analysis can be performed to determine the root cause of such errors. Thus, effective and accurate logic diagnosis is crucial to speed up physical failure analysis process and eventually to improve the yield. In this paper, we propose a new intra-cell diagnosis method based on the “Effect-Cause” approach to improve the defect localization accuracy. The proposed approach is based on the Critical Path Tracing here applied at transistor level. It leads to a precise localization of the root cause of observed errors. Experimental results show the efficiency of our approach.
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