Unseeded growth of poly-crystalline Ge with (111) surface orientation on insulator by pulsed green laser annealing

This paper describes unseeded growth of poly-crystalline Ge with well-oriented large-size grains on insulator from amorphous Ge by scanning pulsed green laser annealing. The Ge was patterned to 2-μm-wide stripes and then annealed by laser irradiation. The annealed Ge stripes were crystallized with well-oriented (111) surface and the grain size was 2 μm wide and ~10 μm long, where the maximum length was 20 μm. The crystallization process was discussed from dependence of the laser fluence on the crystal properties of Ge stripes.