脉冲激光在SiO/ sub2 //Si(100)衬底上沉积LiNbO/ sub3 //LiTaO/ sub3 /多层薄膜

X.L. Guo, Z. Liu, W. Hu, S. Xiong, S. Zhu, Y. Zhu, C. Lin
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引用次数: 0

摘要

采用脉冲激光沉积的方法,在Si(100)晶圆上涂覆SiO/sub - 2/缓冲层,生长出LiNbO/sub - 3//LiTaO/sub - 3/ (LN/LT)多层薄膜。LN和LT层都是多晶的,表现出一定程度的c织构,其组成接近化学计量。膜表面光滑,无裂纹,无大液滴。薄膜/衬底界面清晰,没有检测到组分间的相互扩散。论证了光波导的特性。TE和TM模式都被激发,光在交替的LN/LT层中传播良好。计算了LN/LT多层膜的平均折射率和厚度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Pulsed laser deposition of LiNbO/sub 3//LiTaO/sub 3/ multilayer films on SiO/sub 2//Si(100) substrate
LiNbO/sub 3//LiTaO/sub 3/ (LN/LT) multilayer films are grown on Si(100) wafer coated with a SiO/sub 2/ buffer layer by pulsed laser deposition. Both LN and LT layers are polycrystalline, exhibiting some degree of c-texture, and their compositions are nearly stoichiometric. The film surfaces are smooth, crack free and lack large droplets. The film/substrate interface is sharp and no compositional interdiffusion is detected. Optical waveguide properties are demonstrated. Both TE and TM modes are excited and light propagates well in the alternating LN/LT layers. The average refractive index and thickness of the LN/LT multilayer films are calculated.
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