Analytical expression for temporal width characterization of radiation-induced pulse noises in SOI CMOS logic gates

Radiation-induced pulse noises called single-event transients, SETs, are becoming a serious soft-error source for logic VLSIs. Analytical models explicitly expressing the relationship between the pulse width and radiation/device/circuit parameters are desired as guidelines to develop optimized countermeasures. A simple mathematical expression is devised for characterizing SET pulse widths in SOI CMOS technologies. It is based on the physical mechanisms of the SETs and on the idea of Moll's storage time. Device simulations demonstrate that the expression explains pulse-width trends properly for large radiation-induced noise charges.