Ahmed Saeed, M. Mousa, M. Salah, A. Zekry, M. Abouelatta, A. Shaker, F. Amer, Roaa I. Mubarak
{"title":"33%效率无etl钙钛矿/硅串联电池的设计与仿真","authors":"Ahmed Saeed, M. Mousa, M. Salah, A. Zekry, M. Abouelatta, A. Shaker, F. Amer, Roaa I. Mubarak","doi":"10.37394/232017.2022.13.18","DOIUrl":null,"url":null,"abstract":"Multi-junction (tandem) cell using MAPbI3-xClx and silicon as absorbers has been designed and\nsimulated in this paper. The thickness of the silicon layer in the bottom cell is 2 μm allowing it to absorb the\ntransmitted spectrum from the perovskite subcell as much as possible. The thickness of the MAPbI3-xClx layer is\noptimized using a proposed algorithm. The output metrics show that the optimum thickness of the MAPbI3-xClx\nlayer was 205 nm. The simulation outputs showed that the proposed tandem cell has an efficiency of 33.09% with\nan open circuit voltage of 1.9 V and a short circuit current of 19.95 mA/cm2\n.","PeriodicalId":202814,"journal":{"name":"WSEAS TRANSACTIONS ON ELECTRONICS","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Design and Simulation of ETL-Free Perovskite/Si Tandem Cell with 33% Efficiency\",\"authors\":\"Ahmed Saeed, M. Mousa, M. Salah, A. Zekry, M. Abouelatta, A. Shaker, F. Amer, Roaa I. Mubarak\",\"doi\":\"10.37394/232017.2022.13.18\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Multi-junction (tandem) cell using MAPbI3-xClx and silicon as absorbers has been designed and\\nsimulated in this paper. The thickness of the silicon layer in the bottom cell is 2 μm allowing it to absorb the\\ntransmitted spectrum from the perovskite subcell as much as possible. The thickness of the MAPbI3-xClx layer is\\noptimized using a proposed algorithm. The output metrics show that the optimum thickness of the MAPbI3-xClx\\nlayer was 205 nm. The simulation outputs showed that the proposed tandem cell has an efficiency of 33.09% with\\nan open circuit voltage of 1.9 V and a short circuit current of 19.95 mA/cm2\\n.\",\"PeriodicalId\":202814,\"journal\":{\"name\":\"WSEAS TRANSACTIONS ON ELECTRONICS\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"WSEAS TRANSACTIONS ON ELECTRONICS\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.37394/232017.2022.13.18\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"WSEAS TRANSACTIONS ON ELECTRONICS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.37394/232017.2022.13.18","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and Simulation of ETL-Free Perovskite/Si Tandem Cell with 33% Efficiency
Multi-junction (tandem) cell using MAPbI3-xClx and silicon as absorbers has been designed and
simulated in this paper. The thickness of the silicon layer in the bottom cell is 2 μm allowing it to absorb the
transmitted spectrum from the perovskite subcell as much as possible. The thickness of the MAPbI3-xClx layer is
optimized using a proposed algorithm. The output metrics show that the optimum thickness of the MAPbI3-xClx
layer was 205 nm. The simulation outputs showed that the proposed tandem cell has an efficiency of 33.09% with
an open circuit voltage of 1.9 V and a short circuit current of 19.95 mA/cm2
.