用GLAD合成退火SnO2纳米线阵列作电介质的电容存储器

2022 IEEE VLSI Device Circuit and System (VLSI DCS) Pub Date : 2022-02-26 DOI:10.1109/VLSIDCS53788.2022.9811450

Priyanka Chetri, J. C. Dhar

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引用次数: 1

摘要

本文介绍了利用掠角沉积(GLAD)技术制备沉积和退火SnO2 NWs的方法。研究表明，650°C的SnO2 NWs的结晶度有所改善。通过在不同频率下评估沉积和退火样品的电容电压(CV)和电导电压(G-V)特性，分析了这两种器件的电容行为。该器件的界面阱密度为9.7×109 eV-1cm-2，电荷存储密度为5.45×1010 cm-2，在±8V下，1MHz下的记忆窗口为~ 0.89 V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Capacitive Memory Using GLAD Synthesized Annealed SnO2 Nanowires Array as a Dielectric

This paper presents the fabrication of as-deposited and annealed SnO2 NWs via GLAD (glancing angle deposition) technique. On investigation, the 650 °C SnO2 NWs show improvement in its crystallinity. The capacitive behavior of both the device was analyzed by evaluating the capacitance-voltage (CV) and conductance-voltage (G-V) characteristics for both asdeposited and annealed sample by varying frequencies. The annealed device showed improved capacitive memory with interface trap density (9.7×10⁹ eV^-1cm^-2), charge storage density of 5.45×10¹⁰ cm^-2 and memory window of ~ 0.89 V at ± 8V for 1MHz.

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来源期刊

2022 IEEE VLSI Device Circuit and System (VLSI DCS)

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