1.2µm CMOS工艺肖特基二极管的设计与制造

2010 20th International Conference on Electronics Communications and Computers (CONIELECOMP) Pub Date : 2010-04-01 DOI:10.1109/CONIELECOMP.2010.5440807

Jesús de la Cruz Alejo, L. N. Oliva-Moreno, A. Medina-Vázquez

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引用次数: 0

摘要

给出了采用1.2 μm CMOS工艺制备的两种不同接触面积和几何形状的肖特基二极管的I-V曲线。结合分析和实际的布局设计，对这些曲线进行了描述。它考虑了半导体结构中的电阻、电容和反向击穿电压以及这些参数之间的依赖关系，以改进其工作。所述二极管用于电荷泵电路的实现。

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Design and fabrication of Schottky diodes in 1.2 µm CMOS process

The I-V curves for Schottky diodes with two different contact areas and geometries fabricated through 1.2 μm CMOS process are presented. These curves are described applying the analysis and practical layout design. It takes into account the resistance, capacitance and reverse breakdown voltage in the semiconductor structure and the dependence of these parameters to improve its operation. The described diodes are used for a charge pump circuit implementation.

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2010 20th International Conference on Electronics Communications and Computers (CONIELECOMP)

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