表面偏析与湿式H2S暴露在铜表面形成硫化物膜的比较

Electrical Contacts - 1991 Proceedings of the Thirty-Seventh IEEE HOLM Conference on Electrical Contacts Pub Date : 1900-01-01 DOI:10.1109/HOLM.1991.170828

J.G. Zhang, D. Zhai, M.D. Zhu, L. Chen, R. Vook, R. Kothari

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引用次数: 5

摘要

结果表明:在铜表面技术真空下形成的硫化膜主要由Cu/sub - 2/O和Cu/sub - 2/S组成，其组成与H/sub - 2/S暴露形成的膜略有不同。AES(俄歇电子能谱)深度剖面和ESCA(化学分析电子能谱)实验表明，在超高真空和技术真空中形成的表面分离硫化物膜在空气暴露约5至7天后消失。同时Cu/sub 2/O和CuO的特征氧光发射谱线显著增加。由此得出的结论是，硫完全被氧所取代，由此产生的游离硫在室温下具有很高的蒸气压，只是蒸发了。在空气暴露7天后，在湿H/sub 2/S暴露(1.5-2 p.m)上形成的硫化物膜也有类似的趋势。AES深度剖面显示，硫化膜部分被氧化物埋没，部分消失。湿H/sub /S形成的厚膜极性效应显著;随膜厚的减小而减小。在技术真空中形成的硫分离表面也发现极性效应;然而，随着时间的推移，它会迅速降解。

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Comparison of sulfide films formed on copper by surface segregation and wet H2S exposure

It is shown that the sulfide films formed in a technical vacuum on copper are composed mainly of Cu/sub 2/O and Cu/sub 2/S, and have a composition slightly different from films formed by an H/sub 2/S exposure. AES (Auger electron spectroscopy) depth profiles and ESCA (electron spectroscopy for chemical analysis) experiments showed that surface segregated sulfide films formed in ultrahigh vacuum as well as those formed in a technical vacuum disappeared on air exposure of approximately 5 to 7 days. At the same time the characteristic oxygen photoemission lines from Cu/sub 2/O and CuO increased significantly. It is concluded that the sulfur was entirely replaced by oxygen and that the resulting free sulfur, which has a high vapor pressure at room temperature, simply evaporated. A similar tendency was observed for the sulfide film formed on wet H/sub 2/S exposure (1.5-2 p.p.m.) after a 7 day air exposure. An AES depth profile showed that part of the sulfide film was buried by oxide and part of it vanished. The polarity effect on thick films formed by wet H/sub 2/S was significant; it decreased with decreasing film thickness. A polarity effect was also found on a sulfur segregated surface formed in technical vacuum; however, it degraded rapidly with time.<>

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Electrical Contacts - 1991 Proceedings of the Thirty-Seventh IEEE HOLM Conference on Electrical Contacts

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