CMOS兼容光电二极管的电光特性研究

[1991 Proceedings] 6th Mediterranean Electrotechnical Conference Pub Date : 1991-05-22 DOI:10.1109/MELCON.1991.161791

G. Soncini, M. Zen, M. Rudan, G. Verzellesi

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引用次数: 7

摘要

提出了存在光产生效应时半导体器件方程求解的数值模型。该模型作为通用半导体器件分析程序HFIELDS的一部分开发，将应用于半导体集成成像仪中使用的光学传感器的分析。给出了cmos兼容光电二极管的初步理论结果，并与实验结果进行了比较。

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On the electro-optical characteristics of CMOS compatible photodiodes

A numerical model for the solution of semiconductor-device equations in the presence of an optical-generation effect is presented. This model, developed as a part of the general-purpose semiconductor-device analysis program HFIELDS, is to be applied to the analysis of optical sensors used in semiconductor integrated imagers. Preliminary theoretical results on CMOS-compatible photodiodes are presented and compared with experiments.<>

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[1991 Proceedings] 6th Mediterranean Electrotechnical Conference

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