热处理后对射频磁控溅射制备ZnO薄膜性能的影响

N. D. Md Sin, A. Abdul Aziz, S. Ahmad, M. Musa, M. H. Mamat, M. Rusop
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引用次数: 0

摘要

报道了后热处理对射频磁控溅射法制备ZnO薄膜的影响。研究了ZnO薄膜在300℃~ 550℃范围内热处理后的效果。采用两点探针电流-电压(I-V)测量仪(Keithley 2400)、紫外-可见-近红外分光光度计、场发射扫描电镜(FESEM) (JEOL JSM 7600F)对薄膜进行检测。电流-电压(I-V)测量表明,热处理后温度为500℃时,电导率最佳。通过紫外-可见-近红外分光光度计测量,所有薄膜都具有高紫外吸收(300~380nm)性能,而在可见光和近红外(380~1200nm)区域具有低吸光度。从FESEM观察到的图像显示,随着热处理后的增加,纳米柱尺寸增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of post heat treatment to the properties of ZnO thin film prepared by RF magnetron sputtering
The influence of post heat treatment on ZnO thin films prepared by RF magnetron sputtering was reported. The effect of ZnO thin films post heat treatment were varies from 300°C to 550°C had been investigated. The thin films were examined using two point probe current-voltage (I-V) measurement (Keithley 2400), UV-Vis-NIR spectrophotometer, field emission scanning electron microscopy (FESEM) (JEOL JSM 7600F). The current-voltage (I-V) measurements indicated that the conductivity of post heat treatment temperature of 500°C give the optimum conductivity. All films exhibited high UV absorption (300~380nm) properties and had low absorbance in visible and near infrared (IR) (380~1200nm) region that obtained from UV-Vis-NIR spectrophotometer measurement. The observed image from FESEM shows an increase of the nanocolumnar size, as the post heat treatment increases.
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