强磁场下宽inas量子阱中的回旋加速器跃迁和电子质量

SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-02-28 DOI:10.37681/2181-1652-019-x-2021-1-7

G. Gulyamov, P. Baymatov, B. Abdulazizov, M. Tokhirjonov

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引用次数: 0

摘要

用双波段模型计算了InAs量子阱中电子的回旋加速器质量。计算是在量子阱深度近似为∞的情况下进行的，同时考虑到第二子带的朗道能级。结果表明，考虑电子在第二子带内的回旋跃迁可以很好地描述在强磁场下异质结构InAs/In0.81Ga0.19As/InxAl 1-xAs中得到的实验数据。

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CYCLOTRON TRANSITIONS AND ELECTRON MASS IN A WIDE INAS QUANTUM WELL IN STRONG MAGNETIC FIELDS

The two-band model is used to calculate the cyclotron mass o f an electron in an InAs quantum well. The calculations were performed in the approximation o f infinity o f the depth o f the quantum well, taking into account the Landau level o f the second subband. It is shown that taking into account the cyclotron transition o f electrons within the second subband satisfactorily describes the experimental data obtained in strong magnetic fields in the heterostructure InAs/In0.81Ga0.19As/InxAl 1-xAs.

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SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS

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