5 GHz CMOS低噪声放大器，电感式ESD保护超过3kv HBM

Proceedings of the 30th European Solid-State Circuits Conference Pub Date : 2004-11-15 DOI:10.1109/ESSCIR.2004.1356676

P. Leroux, M. Steyaert

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引用次数: 24

摘要

这项工作提出了一个集成电感提供片上esd保护的5 GHz LNA。电路采用标准的0.18 /spl mu/m CMOS技术实现。LNA在输入和输出都是匹配的。它的功率增益为20 dB，噪声系数为3.5 dB，功耗仅为15 mW(包括输出缓冲器)。防护等级符合2kvⅱ类HBM标准。

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A 5 GHz CMOS low-noise amplifier with inductive ESD protection exceeding 3 kV HBM

This work presents a 5 GHz LNA with on-chip ESD-protection provided by an integrated inductor. The circuit is implemented in a standard 0.18 /spl mu/m CMOS technology. The LNA is matched at both input and output. It achieves a power gain of 20 dB with a noise figure of 3.5 dB at a power consumption of only 15 mW including the output buffer. The protection level complies with the class II HBM standard of 2 kV.

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Proceedings of the 30th European Solid-State Circuits Conference

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