利用α粒子检测低掺杂4H-SiC肖特基势垒二极管的缺陷水平

COMMAD 2012 Pub Date : 2012-12-01 DOI:10.1109/COMMAD.2012.6472414

N. Iwamoto, B. C. Johnson, N. Hoshino, M. Ito, H. Tsuchida, T. Ohshima

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引用次数: 0

摘要

利用单高能α粒子作为陷阱填充脉冲，利用电荷瞬态光谱研究了低掺杂4h碳化硅(SiC)上肖特基势垒二极管(sdd)的缺陷。我们已经成功地检测了在制造，电子辐照和热退火的sdd中的缺陷水平，其中高串联电阻妨碍了使用标准技术，如深能级瞬态光谱(DLTS)。

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Defect levels in low-doped 4H-SiC Schottky barrier diodes detected by using alpha particles

Defects in Schottky barrier diodes (SBDs) formed on low-doped 4H-silicon carbide (SiC) have been studied by charge transient spectroscopy using single high energy alpha particles as the trap filling pulse. We have successfully detected defect levels in as-fabricated, electron-irradiated and thermally annealed SBDs where the high series resistance precludes the use of standard techniques such as deep level transient spectroscopy (DLTS).

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COMMAD 2012

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