RwoH集成封装MCM采用GE HDI工艺与金属屏障

Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93) Pub Date : 1993-06-01 DOI:10.1109/ECTC.1993.346739

J. Burgess, C. Neugebauer

{"title":"RwoH集成封装MCM采用GE HDI工艺与金属屏障","authors":"J. Burgess, C. Neugebauer","doi":"10.1109/ECTC.1993.346739","DOIUrl":null,"url":null,"abstract":"A quasi-hermetic approach to packaging is discussed. A metal overlayer is used to seal the hybrid package. This package used the GE HDI (high density interconnect) overlay process with a metal barrier layer. Background experiments with pinhole filling metal layer selection, process development, and testing are discussed.<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"RwoH integral package for MCM using the GE HDI process with a metal barrier\",\"authors\":\"J. Burgess, C. Neugebauer\",\"doi\":\"10.1109/ECTC.1993.346739\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A quasi-hermetic approach to packaging is discussed. A metal overlayer is used to seal the hybrid package. This package used the GE HDI (high density interconnect) overlay process with a metal barrier layer. Background experiments with pinhole filling metal layer selection, process development, and testing are discussed.<<ETX>>\",\"PeriodicalId\":281423,\"journal\":{\"name\":\"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC.1993.346739\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.1993.346739","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

讨论了一种准密闭的包装方法。金属涂层用于密封混合封装。该封装采用了GE HDI(高密度互连)覆盖工艺和金属阻隔层。讨论了针孔填充金属层的选择、工艺开发和测试等背景实验

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

RwoH integral package for MCM using the GE HDI process with a metal barrier

A quasi-hermetic approach to packaging is discussed. A metal overlayer is used to seal the hybrid package. This package used the GE HDI (high density interconnect) overlay process with a metal barrier layer. Background experiments with pinhole filling metal layer selection, process development, and testing are discussed.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)

自引率

0.00%

发文量