{"title":"高温压电氮化钪铝薄膜的研究","authors":"Xiaolei Shi, Yigang Chen, W. Shi, Linjun Wang","doi":"10.1117/12.888228","DOIUrl":null,"url":null,"abstract":"AlN has weak piezoelectric property (piezoelectric coefficient d33=5.5pCN-1) and a high Curie temperature (>1150°C). By Sc-doping in AlN thin films, it is possible to synthesize ScxAl1-xN alloy with high piezoelectric coefficient and high temperature stability. In this study, c-axis oriented AlN thin films have been successfully grown on Si (100) substrates by DC magnetron reactive sputtering method. First-principles calculations are also performed to investigate the structure of ScxAl1-xN.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Study of high temperature piezoelectric scandium aluminum nitride thin films\",\"authors\":\"Xiaolei Shi, Yigang Chen, W. Shi, Linjun Wang\",\"doi\":\"10.1117/12.888228\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"AlN has weak piezoelectric property (piezoelectric coefficient d33=5.5pCN-1) and a high Curie temperature (>1150°C). By Sc-doping in AlN thin films, it is possible to synthesize ScxAl1-xN alloy with high piezoelectric coefficient and high temperature stability. In this study, c-axis oriented AlN thin films have been successfully grown on Si (100) substrates by DC magnetron reactive sputtering method. First-principles calculations are also performed to investigate the structure of ScxAl1-xN.\",\"PeriodicalId\":316559,\"journal\":{\"name\":\"International Conference on Thin Film Physics and Applications\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Thin Film Physics and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.888228\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Thin Film Physics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.888228","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of high temperature piezoelectric scandium aluminum nitride thin films
AlN has weak piezoelectric property (piezoelectric coefficient d33=5.5pCN-1) and a high Curie temperature (>1150°C). By Sc-doping in AlN thin films, it is possible to synthesize ScxAl1-xN alloy with high piezoelectric coefficient and high temperature stability. In this study, c-axis oriented AlN thin films have been successfully grown on Si (100) substrates by DC magnetron reactive sputtering method. First-principles calculations are also performed to investigate the structure of ScxAl1-xN.
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