高温压电氮化钪铝薄膜的研究

Xiaolei Shi, Yigang Chen, W. Shi, Linjun Wang
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引用次数: 1

摘要

AlN具有弱压电特性(压电系数d33=5.5pCN-1)和高居里温度(>1150℃)。通过在AlN薄膜中掺杂sc,可以合成具有高压电系数和高温稳定性的ScxAl1-xN合金。在本研究中,采用直流磁控反应溅射法在Si(100)衬底上成功生长了c轴取向AlN薄膜。还进行了第一性原理计算来研究ScxAl1-xN的结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study of high temperature piezoelectric scandium aluminum nitride thin films
AlN has weak piezoelectric property (piezoelectric coefficient d33=5.5pCN-1) and a high Curie temperature (>1150°C). By Sc-doping in AlN thin films, it is possible to synthesize ScxAl1-xN alloy with high piezoelectric coefficient and high temperature stability. In this study, c-axis oriented AlN thin films have been successfully grown on Si (100) substrates by DC magnetron reactive sputtering method. First-principles calculations are also performed to investigate the structure of ScxAl1-xN.
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