面向单片三维芯片的异构集成

Sanghyeon Kim, S. Kim, J. Shim, Dae-Myeong Geum, Gunwu Ju, Hansung Kim, Hee Jung Lim, Hyeongrak Lim, Jaehoon Han, Chang-Mo Kang, Dong Seon Lee, J. Song, W. Choi, Hyung-jun Kim
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引用次数: 2

摘要

单片3D (Monolithic 3D, M3D)集成技术通过垂直堆叠晶体管来实现等效缩放已引起广泛关注[1]。它可以减少互连延迟,从而降低芯片的功耗,这是M3D集成的诱人动力。此外,使用M3D,许多其他组件,如数字、模拟、MEMS、传感器等可以异质集成在单个芯片中,以提供增强的功能(图1)。在这种情况下,M3D概念可以通过集成两种或更多不同的材料来获得额外的好处[2]。不同材料的异质集成与M3D的结合更加强大,因为不同材料的每个工艺不必共享相同的工艺步骤和顺序,使我们的工艺设计更加灵活,并且它的优势物理特性自然具有许多好处。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Heterogeneous integration toward monolithic 3D chip
Monolithic 3D (M3D) integration has attracted lots of attentions to continue equivalent scaling by vertically stacking transistors [1]. It allows the reduction of the interconnect delay, resulting in reduction of the power consumption of the chip, which is the attractive driving force for M3D integration. Moreover, with M3D, many other components such as digital, analog, MEMS, sensors, etc. can be heterogeneously integrated together in a single chip to provide enhanced functionality (Fig. 1). In this context, M3D concept can have additional benefit by integrating two or more different materials [2]. Heterogeneous integration of different materials combined with M3D is more powerful, because each processes with different materials don't have to share same process step and sequence, allowing us more flexible process design and it naturally has many benefits from their advantageous physical properties.
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