Sanghyeon Kim, S. Kim, J. Shim, Dae-Myeong Geum, Gunwu Ju, Hansung Kim, Hee Jung Lim, Hyeongrak Lim, Jaehoon Han, Chang-Mo Kang, Dong Seon Lee, J. Song, W. Choi, Hyung-jun Kim
{"title":"面向单片三维芯片的异构集成","authors":"Sanghyeon Kim, S. Kim, J. Shim, Dae-Myeong Geum, Gunwu Ju, Hansung Kim, Hee Jung Lim, Hyeongrak Lim, Jaehoon Han, Chang-Mo Kang, Dong Seon Lee, J. Song, W. Choi, Hyung-jun Kim","doi":"10.1109/S3S.2017.8309242","DOIUrl":null,"url":null,"abstract":"Monolithic 3D (M3D) integration has attracted lots of attentions to continue equivalent scaling by vertically stacking transistors [1]. It allows the reduction of the interconnect delay, resulting in reduction of the power consumption of the chip, which is the attractive driving force for M3D integration. Moreover, with M3D, many other components such as digital, analog, MEMS, sensors, etc. can be heterogeneously integrated together in a single chip to provide enhanced functionality (Fig. 1). In this context, M3D concept can have additional benefit by integrating two or more different materials [2]. Heterogeneous integration of different materials combined with M3D is more powerful, because each processes with different materials don't have to share same process step and sequence, allowing us more flexible process design and it naturally has many benefits from their advantageous physical properties.","PeriodicalId":333587,"journal":{"name":"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Heterogeneous integration toward monolithic 3D chip\",\"authors\":\"Sanghyeon Kim, S. Kim, J. Shim, Dae-Myeong Geum, Gunwu Ju, Hansung Kim, Hee Jung Lim, Hyeongrak Lim, Jaehoon Han, Chang-Mo Kang, Dong Seon Lee, J. Song, W. Choi, Hyung-jun Kim\",\"doi\":\"10.1109/S3S.2017.8309242\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Monolithic 3D (M3D) integration has attracted lots of attentions to continue equivalent scaling by vertically stacking transistors [1]. It allows the reduction of the interconnect delay, resulting in reduction of the power consumption of the chip, which is the attractive driving force for M3D integration. Moreover, with M3D, many other components such as digital, analog, MEMS, sensors, etc. can be heterogeneously integrated together in a single chip to provide enhanced functionality (Fig. 1). In this context, M3D concept can have additional benefit by integrating two or more different materials [2]. Heterogeneous integration of different materials combined with M3D is more powerful, because each processes with different materials don't have to share same process step and sequence, allowing us more flexible process design and it naturally has many benefits from their advantageous physical properties.\",\"PeriodicalId\":333587,\"journal\":{\"name\":\"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/S3S.2017.8309242\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2017.8309242","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Heterogeneous integration toward monolithic 3D chip
Monolithic 3D (M3D) integration has attracted lots of attentions to continue equivalent scaling by vertically stacking transistors [1]. It allows the reduction of the interconnect delay, resulting in reduction of the power consumption of the chip, which is the attractive driving force for M3D integration. Moreover, with M3D, many other components such as digital, analog, MEMS, sensors, etc. can be heterogeneously integrated together in a single chip to provide enhanced functionality (Fig. 1). In this context, M3D concept can have additional benefit by integrating two or more different materials [2]. Heterogeneous integration of different materials combined with M3D is more powerful, because each processes with different materials don't have to share same process step and sequence, allowing us more flexible process design and it naturally has many benefits from their advantageous physical properties.