A. Gehring, S. Harasek, E. Bertagnolli, S. Selberherr
{"title":"先进CMOS器件中ZrO/sub / gate介质的评价","authors":"A. Gehring, S. Harasek, E. Bertagnolli, S. Selberherr","doi":"10.1109/ESSDERC.2003.1256916","DOIUrl":null,"url":null,"abstract":"We discuss modeling issues of ZrO/sub 2/ insulating layers fabricated by metal-organic chemical vapor deposition (MOCVD). Tunneling through such layers cannot be described within the established Tsu-Esaki model due to the presence of a strong trap-assisted tunneling component. Trap energy levels and. concentrations can be extracted from the time constants of the measured trap charging and discharging processes. A trap concentration of 4.5/spl times/10/sup 18/ cm/sup -3/ with a trap energy level of 1.3 eV below the ZrO/sub 2/ conduction band edge was found for the considered layer. The parameters are used to simulate a 50 nm 'well-tempered' MOSFET and the influence of the high-/spl kappa/ dielectric on the threshold voltage was studied. Two counteracting effects are found: while the fringing fields from the drain contact reduce the threshold voltage, the presence of traps in the dielectric can lead to a strong increase of the threshold voltage.","PeriodicalId":350452,"journal":{"name":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","volume":"255 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Evaluation of ZrO/sub 2/ gate dielectrics for advanced CMOS devices\",\"authors\":\"A. Gehring, S. Harasek, E. Bertagnolli, S. Selberherr\",\"doi\":\"10.1109/ESSDERC.2003.1256916\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We discuss modeling issues of ZrO/sub 2/ insulating layers fabricated by metal-organic chemical vapor deposition (MOCVD). Tunneling through such layers cannot be described within the established Tsu-Esaki model due to the presence of a strong trap-assisted tunneling component. Trap energy levels and. concentrations can be extracted from the time constants of the measured trap charging and discharging processes. A trap concentration of 4.5/spl times/10/sup 18/ cm/sup -3/ with a trap energy level of 1.3 eV below the ZrO/sub 2/ conduction band edge was found for the considered layer. The parameters are used to simulate a 50 nm 'well-tempered' MOSFET and the influence of the high-/spl kappa/ dielectric on the threshold voltage was studied. Two counteracting effects are found: while the fringing fields from the drain contact reduce the threshold voltage, the presence of traps in the dielectric can lead to a strong increase of the threshold voltage.\",\"PeriodicalId\":350452,\"journal\":{\"name\":\"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.\",\"volume\":\"255 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2003.1256916\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2003.1256916","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evaluation of ZrO/sub 2/ gate dielectrics for advanced CMOS devices
We discuss modeling issues of ZrO/sub 2/ insulating layers fabricated by metal-organic chemical vapor deposition (MOCVD). Tunneling through such layers cannot be described within the established Tsu-Esaki model due to the presence of a strong trap-assisted tunneling component. Trap energy levels and. concentrations can be extracted from the time constants of the measured trap charging and discharging processes. A trap concentration of 4.5/spl times/10/sup 18/ cm/sup -3/ with a trap energy level of 1.3 eV below the ZrO/sub 2/ conduction band edge was found for the considered layer. The parameters are used to simulate a 50 nm 'well-tempered' MOSFET and the influence of the high-/spl kappa/ dielectric on the threshold voltage was studied. Two counteracting effects are found: while the fringing fields from the drain contact reduce the threshold voltage, the presence of traps in the dielectric can lead to a strong increase of the threshold voltage.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
