{"title":"2.3 kV 4H-SiC累积通道jbsfet:线性、六边形和八边形电池拓扑的实验比较","authors":"Aditi Agarwal, Kijeong Han, B. Baliga","doi":"10.1109/DRC50226.2020.9135164","DOIUrl":null,"url":null,"abstract":"The body diode of a SiC power MOSFET is not suitable for current conduction in the third quadrant due high on-state voltage drop, large reverse recovery losses [1] , and possibility of bipolar degradation [2] . Integrating a Junction Barrier Schottky (JBS) diode with the MOSFET (called JBSFET) solves these issues [3] , [4] for 1.2 kV devices. This paper reports experimental data on 2.3 kV JBSFETs with different cell topologies (Linear, Hexagonal and Octagonal) for the first time at this larger voltage capability .","PeriodicalId":397182,"journal":{"name":"2020 Device Research Conference (DRC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies\",\"authors\":\"Aditi Agarwal, Kijeong Han, B. Baliga\",\"doi\":\"10.1109/DRC50226.2020.9135164\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The body diode of a SiC power MOSFET is not suitable for current conduction in the third quadrant due high on-state voltage drop, large reverse recovery losses [1] , and possibility of bipolar degradation [2] . Integrating a Junction Barrier Schottky (JBS) diode with the MOSFET (called JBSFET) solves these issues [3] , [4] for 1.2 kV devices. This paper reports experimental data on 2.3 kV JBSFETs with different cell topologies (Linear, Hexagonal and Octagonal) for the first time at this larger voltage capability .\",\"PeriodicalId\":397182,\"journal\":{\"name\":\"2020 Device Research Conference (DRC)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 Device Research Conference (DRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC50226.2020.9135164\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 Device Research Conference (DRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC50226.2020.9135164","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies
The body diode of a SiC power MOSFET is not suitable for current conduction in the third quadrant due high on-state voltage drop, large reverse recovery losses [1] , and possibility of bipolar degradation [2] . Integrating a Junction Barrier Schottky (JBS) diode with the MOSFET (called JBSFET) solves these issues [3] , [4] for 1.2 kV devices. This paper reports experimental data on 2.3 kV JBSFETs with different cell topologies (Linear, Hexagonal and Octagonal) for the first time at this larger voltage capability .
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