一种紧凑的低压一阶温度补偿CMOS电流基准

B. Calvo, C. Azcona, N. Medrano-Marqués, S. Celma, M. D. R. V. Bernal
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引用次数: 6

摘要

本文介绍了两种新型低压一阶温度补偿CMOS电流基准电路的设计。为了实现能够在低电压和低功耗下工作的紧凑拓扑结构,它们基于交叉耦合电流反射镜的最简单方法,并通过引入温度相关的电流反射镜比来获得补偿。0.18 μm CMOS实现的结果表明,所提出的1 μA参考电路在低至1 V的电源下工作,在-40至120°C的范围内温度漂移低于238 ppm/°C,这使得它们适合低成本便携式应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A compact low-voltage first-order temperature-compensated CMOS current reference
This paper presents the design of two new low-voltage first-order temperature compensated CMOS current references. To achieve compact topologies able to operate under low voltage with low power consumption, they are based on the simplest approach of cross-coupled current mirrors, and compensation is obtained by introducing a temperature dependent current mirror ratio. Results for 0.18 μm CMOS implementations show that the proposed 1 μA references operate with supplies down to 1 V showing temperature drifts below 238 ppm/°C over the (-40 to 120°C) range, which makes them suitable for low-cost portable applications.
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