Power loss estimating in GaN E-HEMT based synchronous buck-boost converter

This paper presents an extended estimation of power loss in synchronous buck-boost DC/DC converter based on low voltage GaN E-HEMT power transistors. The converter is designed as a cascaded connection of buck and boost. In contrast to basic two-switch topology, it provides non-inverting voltage characteristic preserving limited usage of passive components. Due to the increased number of switches, the focus is on transistor losses. The difference between GaN E-HEMT and Si transistors is also included. Analytical calculations and simulation results are shown and compared with experimental research.