{"title":"一种用于面积小于mm2的OFDM应用的0.13 /spl mu/m CMOS低功耗5GHz收发器","authors":"Yiping Han, L. Larson","doi":"10.1109/RFIC.2007.380901","DOIUrl":null,"url":null,"abstract":"A 5 GHz direct conversion transceiver is fabricated in a 0.13 mum CMOS process for WLAN 802.11a applications. The transmitter achieves -56 dBc LO leakage, -36 dBc sideband rejection, -43 dBc 3rd harmonic suppression at 5.4 GHz, and an EVM of 3.4% at 5.1 GHz with 60 mW power consumption. The receiver achieves 3.3 dB NF, 27 dB conversion gain, -12 dBm IIP3, and a measured 1/f noise corner of 110 kHz with 36 mW power consumption from a 1.2 V supply voltage. The active area was 0.9 mm2.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A Low-Power 5GHz Transceiver in 0.13 /spl mu/m CMOS for OFDM Applications with Sub-mm2 Area\",\"authors\":\"Yiping Han, L. Larson\",\"doi\":\"10.1109/RFIC.2007.380901\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 5 GHz direct conversion transceiver is fabricated in a 0.13 mum CMOS process for WLAN 802.11a applications. The transmitter achieves -56 dBc LO leakage, -36 dBc sideband rejection, -43 dBc 3rd harmonic suppression at 5.4 GHz, and an EVM of 3.4% at 5.1 GHz with 60 mW power consumption. The receiver achieves 3.3 dB NF, 27 dB conversion gain, -12 dBm IIP3, and a measured 1/f noise corner of 110 kHz with 36 mW power consumption from a 1.2 V supply voltage. The active area was 0.9 mm2.\",\"PeriodicalId\":356468,\"journal\":{\"name\":\"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2007.380901\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2007.380901","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Low-Power 5GHz Transceiver in 0.13 /spl mu/m CMOS for OFDM Applications with Sub-mm2 Area
A 5 GHz direct conversion transceiver is fabricated in a 0.13 mum CMOS process for WLAN 802.11a applications. The transmitter achieves -56 dBc LO leakage, -36 dBc sideband rejection, -43 dBc 3rd harmonic suppression at 5.4 GHz, and an EVM of 3.4% at 5.1 GHz with 60 mW power consumption. The receiver achieves 3.3 dB NF, 27 dB conversion gain, -12 dBm IIP3, and a measured 1/f noise corner of 110 kHz with 36 mW power consumption from a 1.2 V supply voltage. The active area was 0.9 mm2.
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