PASP缓蚀剂对Cu-Co电偶腐蚀的影响

Haoran Li, Baoguo Zhang, Ye Li, Xiaofan Yang, Wei Wei, Zhaoxia Yang
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引用次数: 0

摘要

集成电路特征尺寸降至14 nm及以下后,Co逐渐取代Ta成为有效的势垒层材料。但由于Cu和Co之间存在较大的标准电位差,Co-Cu界面发生严重的电偶腐蚀。探讨了聚天冬氨酸(PASP)在碱性条件下对Cu/Co电偶腐蚀的影响。结果表明,PASP能提高Cu的材料去除率(MRR),降低Cu与Co之间的电偶腐蚀,Cu/Co的腐蚀电位差小于20 mV。本文讨论了电偶腐蚀的机理和缓蚀作用。这种新型的绿色可生物降解缓蚀剂可能是屏障浆料配方的潜在候选材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of PASP Inhibitor on Cu-Co Galvanic Corrosion
After integrated circuit feature size is down to 14 nm and under, Co has gradually replaced Ta as an effective barrier layer material. But due to large standard potential difference between Cu and Co, severe galvanic corrosion happens in the Co-Cu interface. The effect of polyaspartic acid (PASP) on Cu/Co galvanic corrosion in alkaline condition was discussed. The results showed that PASP could improve the Material removal rate (MRR) of Cu and reduce the galvanic corrosion between Cu and Co. The corrosion potential difference of Cu/Co was less than 20 mV. In this paper, the mechanism of galvanic corrosion and inhibition was discussed. The new green biodegradable corrosion inhibitor could be a potential candidate in barrier slurry formulation.
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