第四个元件或缺失的忆阻器

V. Mladenov
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引用次数: 0

摘要

1971年,蔡利昂从对称性论证中推断出,应该有第四个基本元素,他称之为忆阻器(记忆电阻的简称)。尽管他展示了这种元件有许多有趣和有价值的电路特性,但直到2008年,还没有人提出一个有用的物理模型或忆阻器的例子。在《自然》杂志(2008)的论文中,Stan Williams团队通过一个简单的分析例子表明,在外部偏置电压下,固态电子和离子输运耦合的纳米级系统中,忆阻会自然产生。这些结果为理解在许多涉及带电原子或分子种类运动的纳米级电子中观察到的广泛的滞后电流-电压行为奠定了基础,特别是某些二氧化钛交叉点开关。在讲座中,我们将简要介绍忆阻器,并介绍其潜在的应用。记忆电阻器的一个很有前途的应用是基于其模仿自然神经的特性。一些研究小组使用这种忆阻器作为人工大脑蓝图的关键部件。在讲座的最后,我们也会考虑到具有学习能力的忆阻器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The fourth element or the missing memristor
In 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor (short for memory resistor). Although he showed that such an element has many interesting and valuable circuit properties, until 2008 no one has presented either a useful physical model or an example of a memristor. In the paper in Nature (2008) the team of Stan Williams show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current-voltage behavior observed in many nanoscale electronic that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross-point switches. In the talk a brief overview of the memristors will be given and the potential applications will be presented. A promising application of memristor is based on its property to imitate natural nerves. Some research groups use such memristors as key components in a blueprint for an artificial brain. A memristor that is capable of learning will be considered at the end of the talk as well.
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