用数值积分法计算非均匀通道掺杂GaAs MESFET的I-V曲线

1994 IEEE Hong Kong Electron Devices Meeting Pub Date : 1994-07-18 DOI:10.1109/HKEDM.1994.395136

T. Weng

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引用次数: 0

摘要

提出了一种计算离子注入层GaAs MESFET I-V特性的数值方法。该方法的基础是发现沟道电导是金属-半导体结电压降的函数，而电压降又通过泊松方程的解与有源层的耗尽深度有关。

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Calculation of I-V curves of a GaAs MESFET with nonuniform channel doping by means of numerical integration

A numerical method for calculating the I-V characteristics of a GaAs MESFET with ion implanted layer is presented. This method is based on the finding of the channel conductance as a function of the voltage drop across the metal-semiconductor junction which in turn is related to the depletion depth of the active layer through the solution of Poisson's equation.<>

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1994 IEEE Hong Kong Electron Devices Meeting

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