高电致变色性能氧化钨薄膜的制备与表征

G. Lv, Yonggang Wu, Heyun Wu, Leijie Ling, Zihuan Xia
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引用次数: 1

摘要

采用反应蒸发法制备氧化钨薄膜,分别在常温和200℃条件下将WO3沉积在ITO涂层玻璃基板上。以不同的沉积速率生长薄膜。进行了计时电流测量,并在原位进行了光谱测量。结果表明,低沉积速率制备的薄膜具有较高的显色效率(CE),常温下生长的薄膜比200℃下生长的薄膜具有更高的显色效率(CE)。从非晶氧化钨薄膜的电致变色机理出发,分析和讨论了薄膜显色效率差异的原因。采用原子力显微镜(AFM)对样品进行形貌表征。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Preparation and characterization of tungsten oxide thin films with high electrochromic performance
Tungsten oxide thin films were prepared by depositing WO3 onto glass substrates coated with ITO using reactive evaporation process at ambient temperature and 200°C respectively. The thin films were grown at different deposition rate. Chronoamperometry was carried out and spectral measurements were performed in situ. Results showed that the thin films prepared at low deposition rates possess higher coloration efficiency (CE), and the thin films grown at ambient temperature have high CE than those grown at 200°C. The origin of the differences in coloration efficiency of the thin films were analyzed and discussed based on the electrochromic mechanism of amorphous tungsten oxide films. The samples morphology was characterized by atom force microscopy (AFM).
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