CDM改进中敏感电路及布局的研究

Jian-Hsing Lee, J. Shih, Shawn Guo, Dao-Hong Yang, Jone F. Chen, D. Su, Kenneth Wu
{"title":"CDM改进中敏感电路及布局的研究","authors":"Jian-Hsing Lee, J. Shih, Shawn Guo, Dao-Hong Yang, Jone F. Chen, D. Su, Kenneth Wu","doi":"10.1109/IPFA.2009.5232664","DOIUrl":null,"url":null,"abstract":"The influence of the internal circuit layout on the chip CDM performance is reported in this paper. It is found that the well pick-up has great impact on the chip CDM performance. The well pick-up can sink the CDM current into the P-Well and induce the non-uniform current to stress the device. This paper also verifies that the bus-line capacitors are more important than the package capacitor for chip CDM since the well pick-up only can affect the current coming from bus line capacitors, but cannot affect the current coming from the package capacitor. Moreover, putting the circuit and ESD protection device in the deep-NWell to isolate the circuit from the P-substrate and using the long contact-to-contact space for ESD protection device also can get the better CDM performance.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"98 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"The study of sensitive circuit and layout for CDM improvement\",\"authors\":\"Jian-Hsing Lee, J. Shih, Shawn Guo, Dao-Hong Yang, Jone F. Chen, D. Su, Kenneth Wu\",\"doi\":\"10.1109/IPFA.2009.5232664\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of the internal circuit layout on the chip CDM performance is reported in this paper. It is found that the well pick-up has great impact on the chip CDM performance. The well pick-up can sink the CDM current into the P-Well and induce the non-uniform current to stress the device. This paper also verifies that the bus-line capacitors are more important than the package capacitor for chip CDM since the well pick-up only can affect the current coming from bus line capacitors, but cannot affect the current coming from the package capacitor. Moreover, putting the circuit and ESD protection device in the deep-NWell to isolate the circuit from the P-substrate and using the long contact-to-contact space for ESD protection device also can get the better CDM performance.\",\"PeriodicalId\":210619,\"journal\":{\"name\":\"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"98 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2009.5232664\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2009.5232664","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13

摘要

本文报道了内部电路布局对芯片CDM性能的影响。研究发现,良好的拾取对芯片的CDM性能有很大的影响。阱拾取器可以将CDM电流吸收到p阱中,并诱导非均匀电流对器件施加应力。对于片式CDM,母线电容比封装电容更重要,因为阱拾取只会影响母线电容的电流,而不会影响封装电容的电流。此外,将电路和ESD保护器件置于深阱中使电路与p基板隔离,并采用较长的触点空间作为ESD保护器件,也可以获得较好的CDM性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The study of sensitive circuit and layout for CDM improvement
The influence of the internal circuit layout on the chip CDM performance is reported in this paper. It is found that the well pick-up has great impact on the chip CDM performance. The well pick-up can sink the CDM current into the P-Well and induce the non-uniform current to stress the device. This paper also verifies that the bus-line capacitors are more important than the package capacitor for chip CDM since the well pick-up only can affect the current coming from bus line capacitors, but cannot affect the current coming from the package capacitor. Moreover, putting the circuit and ESD protection device in the deep-NWell to isolate the circuit from the P-substrate and using the long contact-to-contact space for ESD protection device also can get the better CDM performance.
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