开关自箝位模式“SSCM”，在高压igbt和二极管的SOA性能上取得突破

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/ISPSD.2004.1332970

Munaf T. A. Rahimo, A. Kopta, S. Eicher, U. Schlapbach, S. Linder

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引用次数: 67

摘要

在本文中，我们提出了一个新的高压IGBT和二极管设计平台，展示了迄今为止实现的最高SOA限制。我们首次展示了额定电压范围为3.3 kV至6.5 kV的低损耗IGBT和二极管芯片组，能够承受动态雪崩和我们所说的开关自箝位模式;因此，在高压器件的SOA能力方面取得了明显的突破。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Switching-self-clamping-mode "SSCM", a breakthrough in SOA performance for high voltage IGBTs and diodes

In this paper, we present a new high voltage IGBT and diode design platform exhibiting the highest SOA limits achieved to date. We demonstrate for the first time, low loss IGBT and diode chip-sets with voltage ratings ranging from 3.3 kV to 6.5 kV, capable of withstanding both dynamic avalanche and what we refer to as the switching-self-clamping-mode; hence, resulting in a clear breakthrough in SOA capability for high voltage devices.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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