利用耗散边缘终端增强平面EBG结构的带宽

A. Sadr, N. Masoumi, M. Sharifkhani
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引用次数: 0

摘要

本文研究了利用耗散边缘终端技术增强平面型电磁带隙(EBG)结构的带宽。提出了两种终止方案;第一种是沿每个单个EBG片边缘的端接元件,第二种是沿整个电源平面边缘的端接元件。在第一种情况下,仿真结果表明,下截止频率和上截止频率都得到了提高,可以有效地抑制宽带同步开关噪声。第二种是将下截止频率由普通平面EBG结构的800MHz向下移至13MHz。其相对带宽比常用的EBGs高63%。为了快速仿真和验证全波仿真,建立了这些结构的电路模型,并给出了仿真结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Bandwidth enhancement of planar EBG structure using dissipative edge termination
In this paper, the bandwidth enhancement of planar type electromagnetic bandgap (EBG) structure using dissipative edge termination technique is investigated. Two termination schemes are presented; first with the termination elements along edges of every single EBG patches and second with termination along edges of the whole power plane. In the first case, simulations show that, both lower and upper cutoff frequency is improved for wideband suppression of simultaneous switching noise (SSN). For the second one, lower cutoff frequency is shifted downward from 800MHz of common planar EBG structure to 13MHz. which results in relative bandwidth of 63% higher than the commonly used EBGs. For fast simulation and validation of full-wave simulation, the circuit model of these structures is developed and simulation results are also presented.
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