负载双极状态下SiC MPS二极管的重复浪涌电流试验

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-01 DOI:10.1109/ISPSD.2018.8393679

S. Palanisamy, J. Kowalsky, J. Lutz, T. Basler, R. Rupp, Jasmin Moazzami-Fallah

{"title":"负载双极状态下SiC MPS二极管的重复浪涌电流试验","authors":"S. Palanisamy, J. Kowalsky, J. Lutz, T. Basler, R. Rupp, Jasmin Moazzami-Fallah","doi":"10.1109/ISPSD.2018.8393679","DOIUrl":null,"url":null,"abstract":"The reliability of power diodes under surge current is an important factor that has to be taken into account for power electronic applications. In this work, latest generation SiC MPS (Merged Pin Schottky) diodes (650V, 1200V, 1700V) with different current classes from Infineon are exposed to repetitive high surge current stress. Furthermore, the temperature was estimated using different methods including direct measurement, Sentaurus TCAD simulation, Cauer network and an analytical model using temperature dependent mobility. It was found that the diodes could withstand a high number of high-current pulses. However, before reaching final destruction, different ageing phenomenon were observed at the unipolar and bipolar regime of the MPS diode. A detailed investigation on the aging mechanisms including failure analysis was performed.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Repetitive surge current test of SiC MPS diode with load in bipolar regime\",\"authors\":\"S. Palanisamy, J. Kowalsky, J. Lutz, T. Basler, R. Rupp, Jasmin Moazzami-Fallah\",\"doi\":\"10.1109/ISPSD.2018.8393679\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The reliability of power diodes under surge current is an important factor that has to be taken into account for power electronic applications. In this work, latest generation SiC MPS (Merged Pin Schottky) diodes (650V, 1200V, 1700V) with different current classes from Infineon are exposed to repetitive high surge current stress. Furthermore, the temperature was estimated using different methods including direct measurement, Sentaurus TCAD simulation, Cauer network and an analytical model using temperature dependent mobility. It was found that the diodes could withstand a high number of high-current pulses. However, before reaching final destruction, different ageing phenomenon were observed at the unipolar and bipolar regime of the MPS diode. A detailed investigation on the aging mechanisms including failure analysis was performed.\",\"PeriodicalId\":166809,\"journal\":{\"name\":\"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)\",\"volume\":\"91 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2018.8393679\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2018.8393679","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 13

摘要

功率二极管在浪涌电流作用下的可靠性是电力电子应用中必须考虑的一个重要因素。在这项工作中，英飞凌不同电流等级的最新一代SiC MPS(合并引脚肖特基)二极管(650V, 1200V, 1700V)暴露在重复的高浪涌电流应力下。此外，利用直接测量、Sentaurus TCAD模拟、Cauer网络和基于温度依赖迁移率的分析模型对温度进行了估算。研究发现，这种二极管能够承受大量的大电流脉冲。然而，在达到最终破坏之前，MPS二极管在单极和双极状态下观察到不同的老化现象。对其老化机理进行了详细的研究，并进行了失效分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Repetitive surge current test of SiC MPS diode with load in bipolar regime

The reliability of power diodes under surge current is an important factor that has to be taken into account for power electronic applications. In this work, latest generation SiC MPS (Merged Pin Schottky) diodes (650V, 1200V, 1700V) with different current classes from Infineon are exposed to repetitive high surge current stress. Furthermore, the temperature was estimated using different methods including direct measurement, Sentaurus TCAD simulation, Cauer network and an analytical model using temperature dependent mobility. It was found that the diodes could withstand a high number of high-current pulses. However, before reaching final destruction, different ageing phenomenon were observed at the unipolar and bipolar regime of the MPS diode. A detailed investigation on the aging mechanisms including failure analysis was performed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

自引率

0.00%

发文量