评估电介质TDDB寿命时界面粗糙度缺陷的物理表现

L. Sheng
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引用次数: 3

摘要

提出了一个物理解释电响应的实用模型,以量化复杂的聚-氧化物-聚界面上局部电场的增强效应。在揭示击穿电压和IV特性的独特测试极性依赖性时,TCAD模拟和测量之间的良好一致性充分验证了局部增强场的存在。因此,可靠性缺陷,即人为交替的模型拟合参数,首次在评估由于界面粗糙度而局部增强的电场下的TDDB寿命时得到了体现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A physical manifestation of interfacial roughness pitfalls in assessing dielectric TDDB lifetimes
A practical model of physically interpreting electrical responses was proposed to quantify the enhancement effects of local electrical fields along the complex poly-oxide-poly interfaces. In revealing the unique test polarity dependence of breakdown voltage and IV characteristics, the excellent agreement between TCAD simulations and measurements have fully validated the existence of locally enhanced fields. As a result, the reliability pitfalls, i.e., the artificially alternated model-fitting parameters, have been manifested for the first time in assessing the TDDB lifetimes under locally enhanced electrical fields due to the interfacial roughness.
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