W. Thompson, S. Ogawa, L. Stern, L. Scipioni, J. Notte
{"title":"一种用于互连材料成像的新型氦离子显微镜","authors":"W. Thompson, S. Ogawa, L. Stern, L. Scipioni, J. Notte","doi":"10.1109/IITC.2009.5090342","DOIUrl":null,"url":null,"abstract":"The recently developed helium ion microscope (HIM) can be operated in three imaging modes; ion induced secondary electron (SE) mode, Rutherford Backscatter imaging (RBI) mode, and scanning transmission ion imaging (STIM) mode. When low k dielectric or copper interconnects are imaged in these modes, it was found that unique pattern dimension and fidelity information at sub-nanometer resolution is available for the first time. This paper will discuss the helium ion microscope architecture and the imaging modes that may make it a tool of particular value to the low-k dielectric and dual damascene copper interconnect technology.","PeriodicalId":301012,"journal":{"name":"2009 IEEE International Interconnect Technology Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A novel helium ion microscope for interconnect material imaging\",\"authors\":\"W. Thompson, S. Ogawa, L. Stern, L. Scipioni, J. Notte\",\"doi\":\"10.1109/IITC.2009.5090342\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The recently developed helium ion microscope (HIM) can be operated in three imaging modes; ion induced secondary electron (SE) mode, Rutherford Backscatter imaging (RBI) mode, and scanning transmission ion imaging (STIM) mode. When low k dielectric or copper interconnects are imaged in these modes, it was found that unique pattern dimension and fidelity information at sub-nanometer resolution is available for the first time. This paper will discuss the helium ion microscope architecture and the imaging modes that may make it a tool of particular value to the low-k dielectric and dual damascene copper interconnect technology.\",\"PeriodicalId\":301012,\"journal\":{\"name\":\"2009 IEEE International Interconnect Technology Conference\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Interconnect Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2009.5090342\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2009.5090342","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel helium ion microscope for interconnect material imaging
The recently developed helium ion microscope (HIM) can be operated in three imaging modes; ion induced secondary electron (SE) mode, Rutherford Backscatter imaging (RBI) mode, and scanning transmission ion imaging (STIM) mode. When low k dielectric or copper interconnects are imaged in these modes, it was found that unique pattern dimension and fidelity information at sub-nanometer resolution is available for the first time. This paper will discuss the helium ion microscope architecture and the imaging modes that may make it a tool of particular value to the low-k dielectric and dual damascene copper interconnect technology.