一种用于互连材料成像的新型氦离子显微镜

W. Thompson, S. Ogawa, L. Stern, L. Scipioni, J. Notte
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引用次数: 0

摘要

最新研制的氦离子显微镜(he)具有三种成像模式;离子诱导二次电子(SE)模式、卢瑟福背散射成像(RBI)模式和扫描透射离子成像(STIM)模式。当低k介电或铜互连在这些模式下成像时,首次发现在亚纳米分辨率下可获得独特的图案尺寸和保真度信息。本文将讨论氦离子显微镜的结构和成像模式,这可能使它成为低k介电和双大马士革铜互连技术的特殊价值工具。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A novel helium ion microscope for interconnect material imaging
The recently developed helium ion microscope (HIM) can be operated in three imaging modes; ion induced secondary electron (SE) mode, Rutherford Backscatter imaging (RBI) mode, and scanning transmission ion imaging (STIM) mode. When low k dielectric or copper interconnects are imaged in these modes, it was found that unique pattern dimension and fidelity information at sub-nanometer resolution is available for the first time. This paper will discuss the helium ion microscope architecture and the imaging modes that may make it a tool of particular value to the low-k dielectric and dual damascene copper interconnect technology.
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