{"title":"直流至20 GHz超宽带高增益线性分布式功率放大器,漏极效率19.5%","authors":"H. Bameri, A. Hakimi, M. Movahhedi, H. Abdollahi","doi":"10.1109/IRANIANCEE.2010.5507037","DOIUrl":null,"url":null,"abstract":"In this paper an ultra-broadband linear distributed power amplifier (DPA) is presented. This amplifier consumes only 100 mW DC power and amplifies input powers up to −3.7 dBm with a power gain of 16.7 dB linearly. Output power at 1-dB compression point is 13 dBm in the linear-mode. By increasing the level of input power, the amplifier no longer works in the linear-mode, drain efficiency and non-linear distortions are increased, and power consumption is decreased to 90 mW. S21 parameter is 18±0.9 dB over DC to 20 GHz. The architecture of all power gain cells (including three stages) is cascade of inductively coupled common source. This amplifier is simulated in a 0.13 um CMOS technology.","PeriodicalId":282587,"journal":{"name":"2010 18th Iranian Conference on Electrical Engineering","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A DC to 20 GHz ultra-broadband high-gain-linear distributed power amplifier with 19.5% drain efficiency\",\"authors\":\"H. Bameri, A. Hakimi, M. Movahhedi, H. Abdollahi\",\"doi\":\"10.1109/IRANIANCEE.2010.5507037\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper an ultra-broadband linear distributed power amplifier (DPA) is presented. This amplifier consumes only 100 mW DC power and amplifies input powers up to −3.7 dBm with a power gain of 16.7 dB linearly. Output power at 1-dB compression point is 13 dBm in the linear-mode. By increasing the level of input power, the amplifier no longer works in the linear-mode, drain efficiency and non-linear distortions are increased, and power consumption is decreased to 90 mW. S21 parameter is 18±0.9 dB over DC to 20 GHz. The architecture of all power gain cells (including three stages) is cascade of inductively coupled common source. This amplifier is simulated in a 0.13 um CMOS technology.\",\"PeriodicalId\":282587,\"journal\":{\"name\":\"2010 18th Iranian Conference on Electrical Engineering\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 18th Iranian Conference on Electrical Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRANIANCEE.2010.5507037\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 18th Iranian Conference on Electrical Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRANIANCEE.2010.5507037","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
本文设计了一种超宽带线性分布式功率放大器(DPA)。该放大器仅消耗100mw直流功率,放大输入功率高达- 3.7 dBm,线性功率增益为16.7 dB。在线性模式下,1db压缩点的输出功率为13dbm。通过提高输入功率水平,放大器不再工作在线性模式,漏极效率和非线性失真增加,功耗降低到90mw。S21参数为18±0.9 dB,直流至20ghz。所有功率增益单元(包括三级)的结构都是级联的电感耦合共源。该放大器采用0.13 um CMOS技术进行仿真。
A DC to 20 GHz ultra-broadband high-gain-linear distributed power amplifier with 19.5% drain efficiency
In this paper an ultra-broadband linear distributed power amplifier (DPA) is presented. This amplifier consumes only 100 mW DC power and amplifies input powers up to −3.7 dBm with a power gain of 16.7 dB linearly. Output power at 1-dB compression point is 13 dBm in the linear-mode. By increasing the level of input power, the amplifier no longer works in the linear-mode, drain efficiency and non-linear distortions are increased, and power consumption is decreased to 90 mW. S21 parameter is 18±0.9 dB over DC to 20 GHz. The architecture of all power gain cells (including three stages) is cascade of inductively coupled common source. This amplifier is simulated in a 0.13 um CMOS technology.