{"title":"LPE生长碲高掺杂低(In, As)含量InxGa1-xAsySb1-y季系合金的晶格振动研究","authors":"J. Díaz-Reyes, E. López-Cruz, J. Mendoza-Álvarez","doi":"10.1117/12.815961","DOIUrl":null,"url":null,"abstract":"The quaternary alloy InxGa1-xAsySb1-y highly doped with tellurium was grown on substrates of p-type GaSb in the direction (100) by liquid phase epitaxy (LPE). The longitudinal (LO) and transverse (TO) optical modes were obtained using the modified random-element iso-displacement model (MREI model). The comparison of the experimental results with obtained by the MREI model allows to confirm that the bands correspond to the modes associated LO and TO of the binary compounds GaAs and (GaSb + InAs).","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Lattice vibrations study of InxGa1-xAsySb1-y quaternary alloys with low (In, As) content highly doped by tellurium grown by LPE\",\"authors\":\"J. Díaz-Reyes, E. López-Cruz, J. Mendoza-Álvarez\",\"doi\":\"10.1117/12.815961\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The quaternary alloy InxGa1-xAsySb1-y highly doped with tellurium was grown on substrates of p-type GaSb in the direction (100) by liquid phase epitaxy (LPE). The longitudinal (LO) and transverse (TO) optical modes were obtained using the modified random-element iso-displacement model (MREI model). The comparison of the experimental results with obtained by the MREI model allows to confirm that the bands correspond to the modes associated LO and TO of the binary compounds GaAs and (GaSb + InAs).\",\"PeriodicalId\":273853,\"journal\":{\"name\":\"International Conference on Advanced Optical Materials and Devices\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Advanced Optical Materials and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.815961\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Advanced Optical Materials and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.815961","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Lattice vibrations study of InxGa1-xAsySb1-y quaternary alloys with low (In, As) content highly doped by tellurium grown by LPE
The quaternary alloy InxGa1-xAsySb1-y highly doped with tellurium was grown on substrates of p-type GaSb in the direction (100) by liquid phase epitaxy (LPE). The longitudinal (LO) and transverse (TO) optical modes were obtained using the modified random-element iso-displacement model (MREI model). The comparison of the experimental results with obtained by the MREI model allows to confirm that the bands correspond to the modes associated LO and TO of the binary compounds GaAs and (GaSb + InAs).
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