相移InGaAs/InP多量子阱DFB结构的制备及光学高速表征

Quantum Wells for Optics and Optoelectronics Pub Date : 1900-01-01 DOI:10.1364/qwoe.1989.tub3

M. Korn, A. Forchel, R. Germann, K. Streubel, U. Cebulla

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摘要

我们在MOCVD生长的InGaAs/ inp多量子阱(MQW)层上制作了1.5µm波长范围的一阶相移dfb光栅。通过一种新的光学方法研究了器件的动态特性，该方法可以测试器件的高频特性，达到GHz范围。

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Fabrication and Optical High Speed Characterization of Phase-Shifted InGaAs/InP Multi Quantum Well DFB Structures

We have fabricated 1st order phase shifted DFB-gratings for the 1.5 µm wavelength range on MOCVD grown InGaAs/InP-multi quantum well (MQW) layers. The dynamic properties were investigated by a new optical method which allows to test the high frequency behaviour of the devices far into the GHz range.

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Quantum Wells for Optics and Optoelectronics

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