{"title":"采用集成的发射器、接收器和天线,采用0.18-/spl mu/m CMOS技术实现的15 ghz无线互连","authors":"B. Floyd, C. Hung, K. O. Kenneth","doi":"10.1109/VLSIC.2001.934225","DOIUrl":null,"url":null,"abstract":"Using a 6-metal, copper 0.18-/spl mu/m CMOS technology, a 15-GHz on-chip wireless interconnect system has been demonstrated. The transmission frequency and distance (5.6 mm) of on-chip wireless interconnection have been almost doubled compared to the previously reported system. In addition, an integrated transmitter for on-chip wireless interconnection has been demonstrated. Lastly, the RF potential of CMOS technology for >10 GHz is assessed.","PeriodicalId":346869,"journal":{"name":"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"51","resultStr":"{\"title\":\"A 15-GHz wireless interconnect implemented in a 0.18-/spl mu/m CMOS technology using integrated transmitters, receivers, and antennas\",\"authors\":\"B. Floyd, C. Hung, K. O. Kenneth\",\"doi\":\"10.1109/VLSIC.2001.934225\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using a 6-metal, copper 0.18-/spl mu/m CMOS technology, a 15-GHz on-chip wireless interconnect system has been demonstrated. The transmission frequency and distance (5.6 mm) of on-chip wireless interconnection have been almost doubled compared to the previously reported system. In addition, an integrated transmitter for on-chip wireless interconnection has been demonstrated. Lastly, the RF potential of CMOS technology for >10 GHz is assessed.\",\"PeriodicalId\":346869,\"journal\":{\"name\":\"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"51\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2001.934225\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2001.934225","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 51
摘要
采用6金属,铜0.18-/spl μ m CMOS技术,演示了一个15 ghz片上无线互连系统。与之前报道的系统相比,片上无线互连的传输频率和距离(5.6 mm)几乎增加了一倍。此外,还演示了一种用于片上无线互连的集成发射器。最后,评估了CMOS技术在>10 GHz的射频潜力。
A 15-GHz wireless interconnect implemented in a 0.18-/spl mu/m CMOS technology using integrated transmitters, receivers, and antennas
Using a 6-metal, copper 0.18-/spl mu/m CMOS technology, a 15-GHz on-chip wireless interconnect system has been demonstrated. The transmission frequency and distance (5.6 mm) of on-chip wireless interconnection have been almost doubled compared to the previously reported system. In addition, an integrated transmitter for on-chip wireless interconnection has been demonstrated. Lastly, the RF potential of CMOS technology for >10 GHz is assessed.