将STT-MRAM模型集成到CACTI模拟器中

S. Arcaro, S. Carlo, Marco Indaco, D. Pala, P. Prinetto, E. Vatajelu
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引用次数: 9

摘要

在过去的十年里,学院和私人公司积极探索新兴的存储技术。特别是STT-MRAM正在快速发展,但它在性能和可靠性方面面临着一些挑战。已经提出了几种细胞级别的技术来缓解这些问题,但目前很少有工具和方法来支持设计师评估特定微观级别设计选择对STT-MRAM宏观设计的影响。本文提出了一个基于CACTI模拟器的系统级工具,以帮助存储系统设计者。我们使用我们的工具来生成高性能和低功耗的高速缓存存储器,并与传统的SRAM进行性能、能耗和面积的比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Integration of STT-MRAM model into CACTI simulator
In the last decade, academies and private companies have actively explored emerging memory technologies. STT-MRAM in particular is experiencing a rapid development but it is facing several challenges in terms of performance and reliability. Several techniques at cell level have been proposed to mitigate such issues but currently few tools and methodologies exist to support designers in evaluating the impact that specific micro-level design choices can determine on the STT-MRAM macro design. In this paper we present a system-level tool based on CACTI simulator to assist memory system designers. We use our tool to generate high-performance and low-power cache memories comparing performance, energy consumption, and area with traditional SRAM.
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