{"title":"Al/sub 2/O/sub 3/钝化及优化栅极工艺最小化平面大功率GaAs MESFET栅极滞后","authors":"B. Yang, P. Ye, K. Ng, J. Bude, G. Wilk","doi":"10.1109/ROCS.2004.184347","DOIUrl":null,"url":null,"abstract":"This study demonstrates that using ALD grown Al/sub 2/O/sub 3/ as a surface passivation layer, and by controlling the Al/sub 2/O/sub 3/ over-etch time, the gate lag of a planar high power GaAs MESFET can be controlled to an undetectable level. In addition, more than 30 V higher Vbkd was achieved when the Al/sub 2/O/sub 3/ surface passivation layer was employed. These results indicate that the above reported GaAs MESFET device is very promising for wireless base station high-power amplifier applications.","PeriodicalId":437858,"journal":{"name":"JEDEC (formerly the GaAs REL Workshop) ROCS Workshop, 2004.","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Minimizing gate lag of a planar high-power GaAs MESFET by Al/sub 2/O/sub 3/ passivation and optimized gate process\",\"authors\":\"B. Yang, P. Ye, K. Ng, J. Bude, G. Wilk\",\"doi\":\"10.1109/ROCS.2004.184347\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study demonstrates that using ALD grown Al/sub 2/O/sub 3/ as a surface passivation layer, and by controlling the Al/sub 2/O/sub 3/ over-etch time, the gate lag of a planar high power GaAs MESFET can be controlled to an undetectable level. In addition, more than 30 V higher Vbkd was achieved when the Al/sub 2/O/sub 3/ surface passivation layer was employed. These results indicate that the above reported GaAs MESFET device is very promising for wireless base station high-power amplifier applications.\",\"PeriodicalId\":437858,\"journal\":{\"name\":\"JEDEC (formerly the GaAs REL Workshop) ROCS Workshop, 2004.\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"JEDEC (formerly the GaAs REL Workshop) ROCS Workshop, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ROCS.2004.184347\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"JEDEC (formerly the GaAs REL Workshop) ROCS Workshop, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ROCS.2004.184347","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Minimizing gate lag of a planar high-power GaAs MESFET by Al/sub 2/O/sub 3/ passivation and optimized gate process
This study demonstrates that using ALD grown Al/sub 2/O/sub 3/ as a surface passivation layer, and by controlling the Al/sub 2/O/sub 3/ over-etch time, the gate lag of a planar high power GaAs MESFET can be controlled to an undetectable level. In addition, more than 30 V higher Vbkd was achieved when the Al/sub 2/O/sub 3/ surface passivation layer was employed. These results indicate that the above reported GaAs MESFET device is very promising for wireless base station high-power amplifier applications.
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