相变存储器中的多层沉积可获得最佳持久性能和降低误码率

2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI:10.1109/IMW52921.2022.9779285

Gemma Navarro, C. Sabbione, V. Meli, L. Nistor, M. Frei, J. Garrione, M. Tessaire, F. Fillot, N. Bernier, E. Nolot, B. Sklénard, J. Li, S. Martin, N. Castellani, G. Bourgeois, M. Cyrille, F. Andrieu

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引用次数: 0

摘要

在这项工作中，我们研究了非晶多层(ML)沉积在相变存储器(PCM)中的好处。基于Ge1 Sb2 Te4组成的不同ML堆叠被开发并通过物理化学分析表征，提供了高热收支和更高层均匀性的高织构晶体层的壮观展示。ML PCM器件的性能在16 kb阵列的统计水平上进行了评估，显示出较低的电气参数可变性，最佳的耐用性结果和最低的误码率。

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Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate

In this work we investigate the benefits of amorphous Multilayer (ML) deposition in Phase-Change Memory (PCM). Different ML stacks based on Ge1 Sb2 Te4 composition are developed and characterized by physico-chemical analyses, providing a spectacular demonstration of highly-textured crystalline layer after high thermal budget and of higher layer uniformity. ML PCM device performances are evaluated at statistical level in 16 kb arrays, showing a lower electrical parameters variability, best endurance results and lowest Bit Error Rate wrt equivalent bulk layer.

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2022 IEEE International Memory Workshop (IMW)

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