SiGe HV/CVD在图案化Si衬底上的外延生长

L. Zhi-nong, Chen Pei-yi, Yan Yun-jie, Tsien Pei-hsin
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引用次数: 0

摘要

本文研究了SiGe在图图化Si衬底上的外延生长(patterned SiO/sub 2/ on Si衬底),表明SiGe/Si界面的晶体质量很好,图图化窗口内Si衬底上的SiGe外延薄膜为单晶。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SiGe HV/CVD epitaxy growth on patterned Si substrate
This letter investigates the SiGe epitaxy growth on patterned Si substrate (patterned SiO/sub 2/ on Si substrate), and shows that the crystal quality of the SiGe/Si interface is excellent and that the SiGe epitaxial thin film on Si substrate in the patterned window is a single crystal.
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