E. Josse, T. Skotnicki, M. Jurczak, F. Martin, M. Paoli, B. Tormen, C. Hernandez, I. Campidelli
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High performance 0.1 um pMOSFETs with optimized poly-Si and poly-SiGe gates
In this paper, we demonstrate that a careful optimization of poly-Si and polySiGe gates is able to extend these materials validity, thus postponing the need for metal gate. Improving dopant drive-in and interfacial distribution with fine-grain columnar poly-Si or increasing interfacial activation with poly-SiGe drastically reduces gate poly depletion and helps in suppressing B penetration. Using these options, we show highly performant 0.12 and 0.10 μm pMOS at 1.5V and 1.2V, with drive current as high as 350 μA/μm for IOFF=1 nA/μm and 300μA/μm for IOFF=25 nA/μm, respectively.
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