一种采用堆栈强制泄漏旁路(LBSF)和源跟随器NMOS (SFN)技术的容漏动态寄存器文件

S. Tang, S. Hsu, Y. Ye, J. Tschanz, D. Somasekhar, S. Narendra, Shih-Lien Lu, R. Krishnamurthy, V. De
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引用次数: 22

摘要

采用LBSF和SFN容漏电路技术的LBL和GBL的多端口、256/spl次/32b动态寄存器文件的时钟频率,与最佳的双v /sub T (DVT)设计相比,提高了50%。全LBSF设计的晶体管总宽度最小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A leakage-tolerant dynamic register file using leakage bypass with stack forcing (LBSF) and source follower NMOS (SFN) techniques
Clock frequency of a multi-ported, 256/spl times/32b dynamic register file in a 100nm technology is improved by 50%, compared to the best dual-V/sub T/ (DVT) design, using LBSF and SFN leakage-tolerant circuit techniques for LBL and GBL. Total transistor width of the full LBSF design is the smallest.
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