先进的凸点下金属缩放焊料微凸点互连低至10μm间距

Takahiro Tanaka, Masaru Hatabe, Hironori Yamada, Zhaozhi Li, Y. Tomita
{"title":"先进的凸点下金属缩放焊料微凸点互连低至10μm间距","authors":"Takahiro Tanaka, Masaru Hatabe, Hironori Yamada, Zhaozhi Li, Y. Tomita","doi":"10.23919/ICEP55381.2022.9795439","DOIUrl":null,"url":null,"abstract":"Fe-Co alloy can inhibit intermetallic compound (IMC) growth during assembly process as alternative under bump metallization (UBM) to conventional UBM represented by Ni. Results on IMC growth study indicates Fe-Co UBM is scalable to solder bump first level interconnect (FLI) in 10 μm pitch.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Advanced Under-Bump-Metal Scaling Solder Micro-Bump Interconnect Down to 10μm Pitch\",\"authors\":\"Takahiro Tanaka, Masaru Hatabe, Hironori Yamada, Zhaozhi Li, Y. Tomita\",\"doi\":\"10.23919/ICEP55381.2022.9795439\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Fe-Co alloy can inhibit intermetallic compound (IMC) growth during assembly process as alternative under bump metallization (UBM) to conventional UBM represented by Ni. Results on IMC growth study indicates Fe-Co UBM is scalable to solder bump first level interconnect (FLI) in 10 μm pitch.\",\"PeriodicalId\":413776,\"journal\":{\"name\":\"2022 International Conference on Electronics Packaging (ICEP)\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Conference on Electronics Packaging (ICEP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ICEP55381.2022.9795439\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Conference on Electronics Packaging (ICEP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ICEP55381.2022.9795439","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

Fe-Co合金可以作为碰撞金属化(UBM)的替代材料,在组装过程中抑制金属间化合物(IMC)的生长。IMC生长研究结果表明,Fe-Co UBM可扩展到10 μm间距的凸点一级互连(FLI)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advanced Under-Bump-Metal Scaling Solder Micro-Bump Interconnect Down to 10μm Pitch
Fe-Co alloy can inhibit intermetallic compound (IMC) growth during assembly process as alternative under bump metallization (UBM) to conventional UBM represented by Ni. Results on IMC growth study indicates Fe-Co UBM is scalable to solder bump first level interconnect (FLI) in 10 μm pitch.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信