{"title":"MCM-C、MCM-D和MCM-D/C技术之间的设计权衡","authors":"A. Iqbal, M. Swaminathan, M. Nealon, A. Omer","doi":"10.1109/MCMC.1993.302159","DOIUrl":null,"url":null,"abstract":"Design tradeoffs in electrical performance, wiring density and cost for MCM-C, MCM-D and MCM-D/C technologies are described. MCM-C includes cofired alumina (AlO) substate using molybdenum metallization and cofired glass-ceramic (GC) substrate using copper metallization. MCM-D technology options include a 2-level (coplanar) and a 4-level (triplate) structures utilizing copper in polyimide. MCM-D/C comprises the hybrid of the aforementioned thin and thick film technologies leading to 3, 4 and 5-level thin film options on top of cofired ceramic substrates. The thin film technologies presented represent a range of ground-rule complexity from 25- mu m to 100- mu m pitch. It is concluded that the choice of a particular MCM technology should be application-specific in terms of its cost, performance and wiring density tradeoffs.<<ETX>>","PeriodicalId":143140,"journal":{"name":"Proceedings 1993 IEEE Multi-Chip Module Conference MCMC-93","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":"{\"title\":\"Design tradeoffs among MCM-C, MCM-D and MCM-D/C technologies\",\"authors\":\"A. Iqbal, M. Swaminathan, M. Nealon, A. Omer\",\"doi\":\"10.1109/MCMC.1993.302159\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Design tradeoffs in electrical performance, wiring density and cost for MCM-C, MCM-D and MCM-D/C technologies are described. MCM-C includes cofired alumina (AlO) substate using molybdenum metallization and cofired glass-ceramic (GC) substrate using copper metallization. MCM-D technology options include a 2-level (coplanar) and a 4-level (triplate) structures utilizing copper in polyimide. MCM-D/C comprises the hybrid of the aforementioned thin and thick film technologies leading to 3, 4 and 5-level thin film options on top of cofired ceramic substrates. The thin film technologies presented represent a range of ground-rule complexity from 25- mu m to 100- mu m pitch. It is concluded that the choice of a particular MCM technology should be application-specific in terms of its cost, performance and wiring density tradeoffs.<<ETX>>\",\"PeriodicalId\":143140,\"journal\":{\"name\":\"Proceedings 1993 IEEE Multi-Chip Module Conference MCMC-93\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"30\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 1993 IEEE Multi-Chip Module Conference MCMC-93\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCMC.1993.302159\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 1993 IEEE Multi-Chip Module Conference MCMC-93","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCMC.1993.302159","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design tradeoffs among MCM-C, MCM-D and MCM-D/C technologies
Design tradeoffs in electrical performance, wiring density and cost for MCM-C, MCM-D and MCM-D/C technologies are described. MCM-C includes cofired alumina (AlO) substate using molybdenum metallization and cofired glass-ceramic (GC) substrate using copper metallization. MCM-D technology options include a 2-level (coplanar) and a 4-level (triplate) structures utilizing copper in polyimide. MCM-D/C comprises the hybrid of the aforementioned thin and thick film technologies leading to 3, 4 and 5-level thin film options on top of cofired ceramic substrates. The thin film technologies presented represent a range of ground-rule complexity from 25- mu m to 100- mu m pitch. It is concluded that the choice of a particular MCM technology should be application-specific in terms of its cost, performance and wiring density tradeoffs.<>
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