超低功耗有源rc滤波器采用180nm CMOS技术

2013 IEEE 11th International Workshop of Electronics, Control, Measurement, Signals and their application to Mechatronics Pub Date : 2013-06-24 DOI:10.1109/ECMSM.2013.6648930

S. Rekha, T. Laxminidhi

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引用次数: 3

摘要

本文设计了一种工作在0.5 V电源电压下、采用180nm CMOS技术的低电压、超低功耗五阶切比雪夫低通滤波器。采用基于CMOS逆变器的晶体管作为构建模块。当晶体管工作在亚阈值区域时，建立了该晶体管的亚阈值模型。利用该晶体管设计了一种前馈补偿OTA，用于实现滤波器。所设计的滤波器截止频率为150 kHz，动态范围为54.16 dB，优值为0.02 fJ。滤波器消耗的功率为21.79微瓦。

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Ultra low power active-RC filter in 180 nm CMOS technology

This paper presents the design of a low voltage, ultra low power fifth order Chebyshev low pass filter operating at a power supply voltage of 0.5 V in 180 nm CMOS technology. A CMOS inverter based transconductor is used as the building block. A sub-threshold model is developed for the transconductor as the transistors are operating in sub-threshold region. A feedforward compensated OTA is designed using this transconductor and is used to realize the filter. Designed filter has a cutoff frequency of 150 kHz and offers a dynamic range of 54.16 dB with a figure of merit of 0.02 fJ. Power consumed by the filter is 21.79 microwatt.

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2013 IEEE 11th International Workshop of Electronics, Control, Measurement, Signals and their application to Mechatronics

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